


| Parámetro | Valor |
|---|---|
| Artículo | Specifications |
| Producción | NPN open-collector transistor- Maximum sink current: 50 mA- Applied voltage: 26.4 V DC or less (between output and 0 V)- Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current) |
| Detalles | Thru-beam type |
| Producto | Amplifier Built-in Ultra-compact Laser Sensor |
| Material | Enclosure: Polybutylene terephthalate, Front cover: Acylic, Lens: Glass, Indicator part: Polyarylate |
| Accesorio | MS-EXL2-2 (Mounting plate): 2 pcs. |
| Protección | IP67 (IEC) |
| Número de pieza | EX-L212-J |
| Nombre del producto | Amplifier Built-in Ultra-compact Laser Sensor EX-L200 |
| Repetibilidad | Perpendicular to sensing axis: 0.05 mm0.0020 inor less |
| Tiempo de respuesta | 0.5 ms or less |
| Rango de detección | 3 m9.843 ft |
| Número de producto | EX-L212-J |
| Objeto de detección | Opaque object of ø3 mmø0.118 inor more |
| Tensión de alimentación | 12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less |
| Indicador de encendido | - |
| Humedad ambiental | 35 to 85 % RH, Storage: 35 to 85 % RH |
| Elemento emisor | Red semiconductor laser Class 1 (IEC / JIS/ FDA) (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH(Center for Devices and Radiological Health) under the FDA (Food and Drug Administration)(Maximum output: 390 μW, Peak emission wavelength: 655 nm0.026 mil) |
| Resistencia a los golpes | 500 m/s2acceleration (50 G approx.) in X, Y and Z directions three times each |
| Iluminancia ambiental | Incandescent light: 3,000 lx or less at the light-receiving face |
| Temperatura ambiente | -10 to +55 ℃+14 to +131 ℉(No dew condensation or no icing condition),Storage: -30 to +70 ℃-22 to +158 ℉ |
| Consumo actual | Emitter: 10 mA or lessReceiver: 10 mA or less |
| Indicador de funcionamiento | Orange LED (lights up when the output is ON) (incorporated on the receiver for thru-beam type) |
| Indicador de estabilidad | Green LED (lights up under stable light received condition or stable dark condition) (incorporated on the receiver for thru-beam type) |
| Ajustador de sensibilidad | - |
| Resistencia a la vibración | 10 to 500 Hz frequency, 1.5 mm0.059 indouble amplitude (10 G max.) in X, Y and Z directions for two hours each |
| Resistencia de aislamiento | 20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure |
| Salida:Operación de salida | Light-ON / Dark-ON selectable by the output operation switching input |
| Soportabilidad de tensión | 1,000 V AC for one min. between all supply terminals connected together and enclosure |
| Tamaño del punto de emisión (típico) | Approx. 8 × 5.5 mm0.315 × 0.217 in(vertical × horizontal)(at a sensing distance of 1 m)(Note) In the case sensing distance is 3 m9.843 ft, the emission spot size is H 17 × W 11 mmH 0.669 × W 0.433 in(visual reference value). |
| Cumplimiento de la directiva de marcado CE | EMC Directive, RoHS Directive |
| Salida: Protección contra cortocircuitos | Incorporated (short-circuit protection / inverse polarity protection) |
| Objeto de detección mínimo (típico) | - |
| Repetibilidad (típica) (perpendicular al eje de detección) | - |
Especificaciones técnicas y datos de rendimiento
Guía de instalación y operación